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The Panasonic 2SJ0536 is a silicon P-channel MOSFET designed for switching circuits in secondary battery packs. It features an S-mini type package (EIAJ: SC-70) with dimensions of 2.1±0.1 mm by 1.3±0.1 mm. The device supports a drain-source voltage of −30 V and a continuous drain current of −100 mA, with a peak current rating of −200 mA. Power dissipation is rated at 150 mW. Electrical characteristics include a gate threshold voltage range of −1.0 V to −2.0 V and a forward transfer admittance of 8 mS. The drain-source ON resistance is specified between 50 Ω and 75 Ω under standard test conditions.
Verify the component status as maintenance or discontinued through official channels before finalizing procurement plans. Confirm that the latest product standards align with current design requirements. Ensure compliance with RoHS directives and validate handling precautions for electrostatic sensitive devices during storage and assembly processes.
Select this component for applications requiring low voltage drive and compact form factors. Evaluate the thermal management capabilities given the 150 mW power dissipation limit. Consider the specific ON resistance values when designing for efficiency. Ensure the operating environment remains within the guaranteed temperature ranges to maintain performance stability.
This part belongs to the category of small signal silicon MOSFETs manufactured by Panasonic Electronic Components. It utilizes a P-channel architecture optimized for low voltage drive applications. The device is housed in an EIAJ SC-70 package, commonly referred to as S-mini, which supports tape/magazine packing for automated manufacturing processes.
Consult official documentation for the most up-to-date product standards. Verify compatibility with existing circuit designs if substituting components. Check for any changes in pinout configuration or electrical ratings to ensure seamless integration without redesigning the board layout.