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Product Detailed Parameters
- Description：MOSFET P-CH 30V 100MA SSSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：18Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：12 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SSSMini3-F1
- Package / Case：SOT-723
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Overview
The Panasonic 2SJ0674 is a silicon P-channel MOS FET designed for switching circuits. It features low ON resistance and high-speed switching capabilities within an SSSMini3-F1 package. Key electrical parameters include a drain-source voltage of -30 V, a continuous drain current of -100 mA, and a power dissipation of 100 mW at 25°C. The gate threshold voltage ranges from -0.5 V to -1.5 V, with an ON resistance of 9 Ω to 18 Ω at VGS = -4.0 V.
Feature Summary
- Low ON resistance Ron
- High-speed switching
- SSSMini type package allowing downsizing and automatic insertion
Applications
- Standard applications or general electronic equipment such as office equipment
- Communications equipment
- Measuring instruments
- Household appliances
Procurement Notes
Verify the current lifecycle status on the official Panasonic website before procurement, as this component is listed under maintenance or discontinued categories. Confirm that the latest Product Standards satisfy your requirements, as specifications are subject to change without notice. Ensure compliance with RoHS Directive (EU 2002/95/EC) and observe export control laws if applicable.
Selection Notes
Select this component for standard electronic equipment where space-saving and automatic insertion are priorities due to its compact SSSMini3-F1 package. Ensure the design operates within the absolute maximum ratings, particularly the -30 V drain-source voltage and -100 mA drain current limits. Consider the thermal characteristics, including a channel temperature limit of 125 °C, for reliable operation in general-purpose switching applications.
Part Context
The 2SJ0674 belongs to the category of Silicon P-channel MOS FETs intended for switching circuits. It is manufactured by Panasonic Electronic Components and complies with the RoHS Directive. The device utilizes an SSSMini3-F1 package, which facilitates downsizing of equipment and supports automated manufacturing processes through tape packing.
Replacement Considerations
Consult the official Panasonic website for the most up-to-date information regarding product lifecycle stages, including planned maintenance, maintenance, planned discontinuation, and discontinuation types.
