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Product Detailed Parameters
- Description：POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ128-AZ is a P-Channel Silicon Power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed switching applications in industrial and consumer electronics. The device features a single element configuration with a built-in diode, utilizing Metal-Oxide Semiconductor technology. It is supplied in an R-PSSO-G2 package. Key electrical characteristics include a typical input capacitance (Ciss) of 1000 pF. The component is lead-free and packaged in embossed tape for automated handling.
Feature Summary
- P-Channel silicon power MOSFET architecture optimized for high-speed switching operations
- Integrated single-element design with a built-in diode for simplified circuit topology
- Lead-free construction compliant with environmental standards
Applications
- Industrial power management systems
- Consumer electronic power supplies
- High-speed switching control circuits
Procurement Notes
Verify the obsolete status of this component before integration into new designs. Confirm that the specific suffix -AZ matches the required package and material specifications. Ensure compatibility with existing PCB footprints designated for the R-PSSO-G2 format. Check for available replacement alternatives from the manufacturer's current portfolio to mitigate supply chain risks associated with discontinued parts.
Selection Notes
Select this component only if its P-Channel configuration and high-speed switching capabilities align with the system requirements. Evaluate the 1000 pF input capacitance against drive strength limitations. Consider the single-element structure with a built-in diode as a potential space-saving solution compared to discrete combinations. Verify that the industrial and consumer application ratings meet the operational environment constraints.
Part Context
This part belongs to Renesas' legacy portfolio of single FETs and MOSFETs. It represents a standard discrete power semiconductor solution prior to the company's expanded focus on integrated SiP modules and advanced GaN technologies. The component serves as a foundational switching element in older generation power conversion architectures.
Replacement Considerations
The datasheet indicates the part is obsolete. No public confirmed substitute part numbers are provided in the source documentation. Engineers must consult Renesas for current equivalent recommendations or perform manual cross-referencing based on pinout and electrical parameters.
