2SJ143(04)-S6-AZ

$1.75

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:37a457720f96 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ143(04)-S6-AZ

Overview

The 2SJ143(04)-S6-AZ is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-current switching applications, featuring a DC drain current rating of 16A and low on-resistance characteristics. The device supports 4V gate drive levels, making it suitable for logic-level control interfaces. Key electrical attributes include large current switching capability and the absence of secondary breakdown, ensuring reliable operation in demanding power management environments.

Feature Summary

Optimized for 4V logic-level gate drive compatibility
Capable of handling large DC switching currents up to 16A
Engineered with low on-resistance for improved efficiency
Designed without secondary breakdown for enhanced robustness

Applications

Switching power supplies
Actuator control systems
Pulse circuit implementations

Procurement Notes

Verify the complete part number including the suffix (04)-S6-AZ to ensure correct package and tape/reel configuration. Confirm RoHS compliance status through official Renesas documentation prior to integration. Cross-reference manufacturer datasheets for absolute maximum ratings and thermal characteristics to validate suitability for the specific PCB layout and operating temperature range.

Selection Notes

Select this component when designing circuits requiring P-channel MOSFETs with high current capacity and logic-level gate drive compatibility. Evaluate thermal performance under continuous load conditions given the 16A rating. Ensure the application voltage does not exceed the device's maximum drain-source voltage limits specified in the official datasheet.

Part Context

This component belongs to the Renesas 2SJ143 series of P-channel power MOSFETs. The series is characterized by high-speed switching capabilities and low on-resistance, targeting efficient power management solutions. The specific variant includes packaging and taping specifications indicated by the suffix, distinguishing it from other pin-compatible or electrically similar parts within the broader product family.