2SJ162-E

Description：MOSFET P-CH 160V 7A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:c65a014c26ba Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 160V 7A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：160 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

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2SJ162-E

Overview

The 2SJ162-E is a silicon P-channel MOSFET manufactured by Renesas Electronics Corporation. It features a TO-3P package with three leads and through-hole mounting. The device supports an operating junction temperature of 150°C and offers a maximum power dissipation of 100W at case temperature. Key electrical specifications include a maximum input capacitance of 900 pF measured at Vds = 10V. The component is lead-free, has a moisture sensitivity level of 1, and is supplied in tubes.

Feature Summary

Built-in Schottky barrier diode configuration
High-speed switching capability
Good frequency characteristics for low-frequency power amplification

Applications

Low frequency power amplifiers
Industrial equipment
Consumer electronics

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging or environmental standards. Confirm that the TO-3P through-hole footprint matches the target PCB design. Check for RoHS compliance documentation if restricted substances are a constraint. Ensure thermal management solutions support the 100W case dissipation rating.

Selection Notes

Select this component for applications requiring a P-channel MOSFET with integrated protection diodes. The TO-3P package is suitable for high-power thermal management needs. Consider the 900 pF input capacitance when designing drive circuits for high-speed switching applications. Verify that the 150°C junction temperature rating meets the operational environment requirements.

Part Context

This part belongs to the 2SJ16x series, which includes complementary pairs such as the 2SK1056, 2SK1057, and 2SK1058 N-channel counterparts. The series is designed for low-frequency power amplifier applications. The quality grade is classified as Standard unless otherwise specified in official documentation.