2SJ172-E

$2.41

Description：MOSFET P-CH 60V 10A
Series：*

SKU:7c0d2268e275 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 10A
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2SJ172-E

Overview

The 2SJ172-E is a silicon P-Channel MOS FET manufactured by Renesas Electronics Corporation. It features a 60V drain-source voltage rating and supports a continuous drain current of 10A. The device is designed for low on-resistance and high-speed switching applications. It operates as a 4V gate drive device, allowing direct interfacing with 5V logic sources. The component is supplied in a package suitable for surface mount assembly.

Feature Summary

Low on-resistance for efficient power handling
High-speed switching capability
Low drive current requirements
Compatible with 5V source logic levels

Applications

Motor control circuits
Power management systems
General-purpose switching applications

Procurement Notes

Verify the RoHS compliance status, which indicates adherence to RoHS3 directives. Confirm the Moisture Sensitivity Level (MSL) classification, listed as level 1 with unlimited floor life, to ensure proper storage and handling procedures are followed during assembly. Check the ECCN classification, identified as EAR99, for export control requirements. Ensure the specific suffix '-E' matches the required datasheet version for the intended design implementation.

Selection Notes

Select this component when a P-Channel MOSFET with a 60V rating and 10A current capacity is required. It is suitable for designs needing low on-resistance and fast switching speeds. The 4V gate drive characteristic makes it appropriate for systems powered by 5V logic sources. Consider the package type and thermal performance relative to the application's power dissipation needs.

Part Context

This part belongs to the MOSFET Arrays category within Renesas Electronics' discrete semiconductor portfolio. It is a successor or variant related to the Hitachi Semiconductor 2SJ172 line, reflecting the corporate transition from Hitachi to Renesas. The component serves as a standard power switching element in electronic circuits requiring reliable P-Channel operation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative P-Channel MOSFETs from other manufacturers.