2SJ174-E

$5.61

Description：PCH POWER MOSFET -60V -20A 85MOH
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:1e06d1d43538 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：PCH POWER MOSFET -60V -20A 85MOH
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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2SJ174-E

Overview

The 2SJ174-E is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 60V and a continuous drain current of 20A at ambient temperature, with a thermal dissipation capacity of 75W at case temperature. The device utilizes a TO-220AB through-hole package for robust mounting. Designed for high-speed switching applications, it serves automotive and industrial systems requiring efficient power control.

Feature Summary

P-channel silicon construction for high-speed power switching
Through-hole TO-220AB package for reliable mounting
Optimized for automotive and industrial system applications

Applications

Automotive power switching systems
Industrial high-speed power control
General purpose power management circuits

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm package integrity and pin configuration match the TO-220AB specification. Ensure thermal management design accommodates the 75W case dissipation rating. Validate that the P-channel characteristic aligns with circuit topology requirements.

Selection Notes

Select this component for applications requiring a 60V P-channel switch with 20A current capability. The TO-220AB package suits designs needing through-hole mounting and robust thermal handling. Consider the 75W case dissipation limit when designing heat sinks. Verify compatibility with high-speed switching frequencies in automotive or industrial environments.

Part Context

This part belongs to Renesas' discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It represents a legacy or transferred product line often associated with Hitachi Metals specifications. The component supports power electronics solutions where reliable P-channel switching is required.

Replacement Considerations

Cross-reference with other 60V P-channel MOSFETs in TO-220AB packages. Verify matching electrical parameters including Rds(on), gate charge, and thermal resistance. Ensure pinout compatibility if substituting directly into existing PCB layouts.