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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：25Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SJ181-90STL is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 500 mA at ambient temperature. The device supports surface mount mounting in a DPAK-3 package with a maximum power dissipation of 20 W at case temperature. Key electrical parameters include a maximum input capacitance (Ciss) of 220 pF at Vds = 10 V and an operating temperature range up to 150°C.
Feature Summary
- High speed power switching capability
- Low on-resistance for efficient conduction
- Low drive current requirements
- No secondary breakdown
Applications
- High speed power switching circuits
- Power management systems requiring P-channel control
- Industrial equipment power stages
Procurement Notes
Verify the manufacturer marking and date code against official Renesas documentation to ensure authenticity. Confirm the package type matches the specified DPAK-3 form factor. Check for any specific ordering suffixes that may indicate variations in tape and reel specifications or environmental compliance status. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Select this component when a high-voltage P-channel switch is required for applications demanding low on-resistance and fast switching speeds. Consider the 600 V rating for blocking high voltages and the 500 mA current limit for moderate load applications. Evaluate thermal management needs given the 20 W power dissipation rating at case temperature. Ensure the gate drive circuitry can accommodate the low drive current requirement while maintaining reliable switching performance within the 150°C operating temperature range.
Part Context
This part belongs to the 2SJ181 series of discrete semiconductor products from Renesas Electronics Corporation. The series includes variants such as the 2SJ181(L) and 2SJ181(S), which share similar core technologies but may differ in packaging or specific electrical characteristics. These components are designed for general-purpose power switching applications, leveraging silicon MOS technology for robust performance in industrial and consumer electronics environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by comparing critical parameters such as Vdss, Id, Rds(on), and package dimensions before considering alternative components.
