2SJ199-T2-AZ

Description：P-CHANNEL POWER MOSFET
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:f2192aa341fc Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL POWER MOSFET
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-62
Package / Case：TO-243AA

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2SJ199-T2-AZ

Overview

The Renesas 2SJ199-T2-AZ is a P-Channel Power MOSFET designed for surface mount applications. It features a drain-source voltage rating of 100 V and a continuous drain current of -1 A at ambient temperature. The device is housed in an SC-62 package, which provides a compact form factor suitable for space-constrained designs. With a typical input capacitance of 220 pF, it offers efficient switching characteristics. The component is lead-free and supplied in embossed tape packaging, ensuring compliance with environmental standards while maintaining reliable performance in power management circuits.

Feature Summary

P-Channel configuration for high-side switching applications
Surface mount construction in a compact SC-62 package
Lead-free composition compliant with environmental regulations

Applications

Power management modules
Battery protection circuits
DC-DC converter inputs

Procurement Notes

Verify the specific suffix 'T2-AZ' to confirm the exact tape-and-reel packaging and lead-free status. Ensure the SC-62 footprint matches your PCB design constraints. Cross-reference the manufacturer's latest datasheet for thermal derating curves and absolute maximum ratings before finalizing the bill of materials to guarantee operational reliability under expected load conditions.

Selection Notes

Select this component when a low-current P-Channel MOSFET is required for 100 V applications. The SC-62 package is ideal for dense layouts where standard through-hole or larger surface-mount packages do not fit. Consider the -1 A current limit and thermal dissipation capabilities relative to the system's power budget and ambient operating temperature range.

Part Context

This part belongs to Renesas Electronics Corporation's discrete semiconductor portfolio, specifically within the single FETs category. It serves as a fundamental building block for power switching stages in consumer electronics and industrial control systems. The product line emphasizes reliability and efficiency for modern embedded power solutions.

Replacement Considerations

Consult official substitution guides for equivalent P-Channel MOSFETs with matching 100 V ratings and SC-62 footprints. Verify pin compatibility and electrical parameters such as Rds(on) and gate threshold voltage before implementing any alternative components.