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The 2SJ210(0)-T1B-A is a P-channel small signal MOSFET manufactured by Renesas Electronics Corporation. It is classified as a single field-effect transistor designed for general switching applications. The device utilizes silicon metal-oxide semiconductor technology and supports a drain current of 0.2A with a maximum voltage rating of 60V. It is a one-element configuration suitable for low-power signal processing tasks.
Verify the specific suffix variant (e.g., -AT) against your bill of materials, as packaging and tape specifications may differ between versions. Confirm that the 60V rating and 0.2A current limit align with your circuit requirements before finalizing procurement. Ensure compatibility with standard surface-mount assembly processes.
Select this component for designs requiring a compact P-channel solution with moderate voltage tolerance. The 0.2A current capacity limits its use to low-power environments. Verify thermal management needs based on the expected duty cycle and ambient operating conditions within the specified temperature range.
This part belongs to Renesas' portfolio of single FETs and small signal MOSFETs. It serves as a discrete switching element within broader electronic systems. The product line focuses on providing reliable, space-efficient components for consumer and industrial electronics where precise control of small currents is necessary.
Check for direct substitutes such as the 2SJ210C(0)-T1B-A series variants. Ensure any replacement maintains identical pinout configurations and electrical characteristics, specifically the 60V breakdown voltage and P-channel polarity.