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Product Detailed Parameters
- Description：P-CHANNEL SMALL SIGNAL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SJ211(0)-T1B-A is a P-channel small signal field-effect transistor manufactured by Renesas Electronics Corporation. It features a silicon metal-oxide semiconductor construction with a single element configuration housed in an SC-59 (SOT-323) package. The device supports a maximum drain current of 0.2 A and offers a minimum drain-source breakdown voltage of 100 V. Key electrical characteristics include a maximum on-resistance of 30 Ω and a typical input capacitance of 27 pF. It operates in enhancement mode and includes a built-in diode.
Feature Summary
- P-channel MOSFET technology for signal switching applications
- Integrated body diode for unidirectional current management
- Compact SC-59 surface-mount packaging for space-constrained designs
Applications
- Automotive electronic systems requiring small signal switching
- General-purpose low-power circuit protection
- Signal path control in consumer electronics
Procurement Notes
Verify the manufacturer designation, as historical data links this part to NEC/Renesas. Confirm the specific suffix T1B-A matches the required tape-and-reel format. Ensure the component meets RoHS3 compliance standards if required by your manufacturing process. Cross-reference with official Renesas documentation to confirm pinout compatibility before integration.
Selection Notes
Select this component for applications requiring a compact P-channel switch with moderate voltage handling capabilities. The 100V rating provides sufficient margin for low-voltage automotive and industrial signals. Consider the 30Ω on-resistance when calculating power dissipation in continuous conduction modes. The SC-59 package is suitable for automated assembly processes requiring small footprints.
Part Context
This component belongs to the family of small signal MOSFETs designed for efficient switching in low-power environments. Originally associated with NEC Electronics, the product line was integrated into Renesas Electronics following corporate restructuring. The device serves as a discrete solution for controlling small currents in digital and analog circuits where size and efficiency are critical constraints.
Replacement Considerations
Direct substitutes may include other P-channel MOSFETs in SOT-323 packages with similar voltage and current ratings. Verify that any replacement maintains the same pinout configuration and built-in diode presence. Check for equivalent on-resistance and capacitance values to ensure circuit performance stability.
