ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：P-CHANNEL SMALL SIGNAL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ216-E is a P-channel small signal MOSFET manufactured by Renesas Electronics Corporation. It is designed for switching and amplification applications, including motor drive and load switch functions. The device features a drain-to-source voltage (VDSS) rating of -60 V, a gate-to-source voltage (VGSS) rating of ±20 V, and a continuous drain current (ID) of -35 A.
Feature Summary
- Designed for switching and amplification applications
- Suitable for motor drive circuits
- Capable of load switch operations
Applications
- Motor drive systems
- Load switch applications
- General switching circuits
Procurement Notes
Verify the specific datasheet version and RoHS compliance status directly with Renesas Electronics or authorized distributors before procurement. Confirm that the -E suffix aligns with required manufacturing specifications. Ensure all electrical ratings match the target circuit design requirements to prevent component failure.
Selection Notes
Select this component when a P-channel MOSFET with a -60 V drain-to-source voltage and -35 A continuous drain current capability is required. It is appropriate for designs involving motor drives or high-current load switching where small signal performance is necessary. Verify package compatibility and thermal management needs for the specific application environment.
Part Context
This part belongs to the Renesas Electronics small signal MOSFET portfolio. It serves as a discrete power semiconductor component intended for use in electronic circuits requiring efficient switching control. The device supports various industrial and consumer electronics applications relying on reliable P-channel transistor technology.
Replacement Considerations
Consult official Renesas documentation for confirmed substitute part numbers. Cross-reference electrical parameters such as VDSS, VGSS, and ID when evaluating potential equivalents to ensure functional compatibility.
