2SJ243-T1-A

Description：MOSFET P-CH 30V 100MA SC75-3 USM
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:d2b7ecbe9d97 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 100MA SC75-3 USM
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：25Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：16 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-75-3, USM
Package / Case：SC-75, SOT-416

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2SJ243-T1-A

Overview

The 2SJ243-T1-A is a P-channel small signal MOSFET manufactured by Renesas Electronics Corporation. It features a TO-252 package with three pins and supports a drain current of -0.1 A. The device exhibits an on-resistance of 25 Ω at a gate-source voltage of 10 mA, with a typical input capacitance of 16 pF. It is designed for switching applications and complies with RoHS standards.

Feature Summary

P-channel small signal MOSFET configuration
Low on-resistance characteristics
High current handling capability

Applications

General purpose switching circuits
Small signal amplification stages
Power management modules

Procurement Notes

Verify the manufacturer part number matches exactly 2SJ243-T1-A to ensure compatibility with Renesas specifications. Confirm RoHS compliance status and lead-free certification if required for your assembly process. Check datasheet revisions for any updates to electrical parameters or packaging details before finalizing procurement orders.

Selection Notes

Select this component when a P-channel MOSFET with low on-resistance and high current handling is needed for small signal applications. Consider the -0.1 A drain current limit and 25 Ω on-resistance at 10 mA gate drive when designing the circuit. Ensure the TO-252 package fits your board layout constraints.

Part Context

This component belongs to the Renesas P-channel MOSFET family, specifically designed for small signal switching applications. It shares similar functional characteristics with other devices in the series but is distinguished by its specific electrical ratings and package type. The 2SJ243-T1-A variant offers optimized performance for low-power switching tasks.

Replacement Considerations

Cross-reference with 2SJ243(0)-T1-A for potential substitution options within the same product line. Verify pinout compatibility and electrical parameter alignment before replacing the original component in existing designs.