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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ279S-E is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a -60V drain-source voltage rating and supports a continuous drain current of -5A. The device exhibits a typical on-resistance of 200mΩ, ensuring efficient power switching in low-voltage applications. It is housed in a DPAK(S) surface-mount package with three leads. Key electrical characteristics include a typical input capacitance (Ciss) of 690pF. The component is lead-free and designed for industrial and consumer use cases.
Feature Summary
- P-channel power MOSFET architecture optimized for single-switch applications
- Low on-resistance characteristic for improved power efficiency
- Lead-free construction compliant with environmental standards
- Surface-mount DPAK(S) package design for compact integration
Applications
- Industrial equipment power management
- Consumer electronics power switching
- DC-DC converter circuits
Procurement Notes
Verify the specific suffix against official Renesas documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with DPAK(S) footprint requirements during PCB layout. Confirm RoHS3 compliance status through the manufacturer's latest datasheet or product change notification records prior to finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a -60V P-channel switch with moderate current handling capabilities. The 200mΩ on-resistance balances conduction losses with cost-effectiveness. Consider the DPAK(S) thermal performance for heat dissipation needs. Verify that the 690pF input capacitance aligns with the driving circuit's switching speed requirements.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power MOSFET category. It complements the company's broader range of analog and power management solutions. The 2SJ279S-E serves as a standalone switching element rather than an integrated circuit, providing fundamental building blocks for power stage implementations in various electronic systems.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics when evaluating potential substitutes from other manufacturers to ensure mechanical and electrical compatibility without modifying existing board layouts.
