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Product Detailed Parameters
- Description：PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SJ281-TL-E is a P-channel enhancement mode MOSFET designed for high-voltage switching applications. It utilizes silicon technology and is housed in a TP-FA package with three pins, including two tabs for thermal management. The device supports a continuous drain current of 3 A and withstands a drain-source voltage of 250 V. It features a maximum gate-source voltage rating of ±30 V and is optimized for 4V drive series compatibility.
Feature Summary
- P-channel channel mode enhancement structure
- High voltage capability up to 250 V
- Surface mount mounting style
- Optimized for 4V drive series operation
Applications
- High voltage power switching circuits
- Industrial motor control systems
- Power supply output stages
Procurement Notes
Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the TP-FA package type matches your PCB footprint requirements. Check RoHS compliance status via the specific datasheet revision. Ensure the component meets the required operating temperature range for your application environment before procurement.
Selection Notes
Select this component when a high-voltage P-channel MOSFET is required for surface mount assembly. The 250 V rating suits applications exceeding standard low-voltage limits. The 3 A current capacity defines its load handling capability. Verify that the 4V drive compatibility aligns with your logic level interface constraints.
Part Context
This component belongs to the single FET and MOSFET category within onsemi's discrete semiconductor portfolio. It is classified as a P-channel device suitable for general-purpose high-voltage switching. The product line emphasizes robust reliability for mission-critical power systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official cross-reference guides or distributor databases for verified equivalents.
