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Product Detailed Parameters
- Description：MOSFET P-CH 60V 14A TO220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：120mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba 2SJ304(F) is a silicon P-channel MOS field-effect transistor utilizing L²-π-MOSIV technology. It features an absolute maximum drain-source voltage of -60 V and a continuous drain current rating of -14 A at 25°C case temperature. The device exhibits a typical drain-source on-resistance of 80 mΩ at VGS = -10 V and ID = -7 A, with a forward transfer admittance of 8.0 S. Gate threshold voltage ranges from -0.8 V to -2.0 V. Total gate charge is typically 45 nC under specified test conditions.
Feature Summary
- Utilizes L²-π-MOSIV technology for enhanced performance in power switching applications
- Designed specifically for low-side switching in DC-DC converters, relay drivers, and motor drives
- Features high forward transfer admittance and low leakage current characteristics
Applications
- DC-DC converter circuits
- Relay drive systems
- Motor drive applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package type and marking details match project requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing design specifications.
Selection Notes
Select this component for applications requiring robust P-channel switching with a -60 V breakdown voltage. Ensure thermal management accounts for the channel-to-case thermal resistance of 3.125 °C/W. Verify that the gate drive voltage aligns with the specified threshold range for optimal RDS(ON) performance.
Part Context
This component belongs to the Toshiba discrete semiconductor product line, specifically categorized as a silicon P-channel MOSFET. It is engineered for general electronics applications including computers, office equipment, and industrial robots. The device is manufactured using advanced MOS technology to support efficient power conversion and control tasks.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on pinout or generic electrical parameters without manufacturer confirmation.
