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The 2SJ316-TD-E is a P-channel MOSFET from the onsemi Drive Series, designed for power switching applications. It features a 4V drive capability and utilizes a TD-E package configuration. This component serves as a discrete semiconductor device within the broader FET and MOSFET product categories, intended for integration into electronic circuits requiring reliable p-channel field-effect transistor performance.
Verify the exact datasheet version and RoHS status directly with onsemi or authorized distributors, as availability and compliance details may vary. Confirm the TD-E package dimensions and electrical specifications against your design requirements before finalizing procurement to ensure compatibility.
Select this component based on its P-channel configuration and Drive Series characteristics. Ensure the TD-E package fits your board layout constraints. Validate that the 4V drive series specifications meet your circuit's voltage and current requirements for optimal performance.
This part belongs to onsemi's portfolio of intelligent power and sensing technologies, specifically within the Single FETs and MOSFTs category. It represents a discrete solution for power management needs, complementing the company's broader range of industrial and automotive semiconductor products.
Consult official onsemi documentation for verified substitute part numbers. Cross-reference electrical parameters and package types to ensure functional equivalence without relying on general industry assumptions.