2SJ377(TE16R1,NQ)

$1.27

Description：MOSFET P-CH 60V 5A PW-MOLD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fcaad6ad7161 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 5A PW-MOLD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：190mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：20W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PW-MOLD
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SJ377(TE16R1,NQ)

Overview

The Toshiba Semiconductor and Storage 2SJ377 is a single-channel P-Channel enhancement-mode silicon MOSFET utilizing L²−π-MOSV technology. It features a drain-source voltage rating of −60 V and a continuous DC drain current capacity of −5 A at 25°C. The device exhibits a typical drain-source ON-resistance of 0.16 Ω at VGS = −10 V, with a maximum gate-source voltage of ±20 V. Thermal characteristics include a channel-to-case thermal resistance of 6.25 °C/W and a maximum channel temperature of 150°C. Electrical parameters specify a gate threshold voltage range of −0.8 to −2.0 V and a forward transfer admittance of 4.0 S.

Feature Summary

Utilizes L²−π-MOSV technology for enhanced performance
Features low drain-source ON-resistance for efficient power switching
Supports high forward transfer admittance for effective signal control
Designed for low leakage current operation

Applications

Relay Drive circuits
DC/DC Converter systems
Motor Drive applications

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package type and environmental compliance status. Confirm availability as distribution channels may list this component as obsolete or end-of-life. Ensure the procurement source provides valid traceability data and authentic manufacturer markings matching the J377 lot code format.

Selection Notes

Select this component when designing circuits requiring a −60 V P-Channel MOSFET with a −5 A continuous current capability. The device is suitable for applications demanding low ON-resistance at standard logic-level gate drives. Evaluate thermal management requirements based on the specified channel-to-case thermal resistance and ensure the operating environment remains within the −55°C to 150°C storage temperature range.

Part Context

This component belongs to the Toshiba Field Effect Transistor series manufactured using Silicon P-Channel MOS technology. It is designed for general electronics applications including computers, office equipment, and industrial robots. The device is not intended for use in automotive, medical, or aerospace systems unless explicitly permitted by specific product documentation.