2SJ438(AISIN,Q,M)

Description：MOSFET P-CH TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:38cfb529fe6b Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：5A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220NIS
Package / Case：TO-220-3 Full Pack

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2SJ438(AISIN,Q,M)

Overview

The Toshiba 2SJ438 is a silicon P-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a low drain-source ON resistance of 0.16 Ω (typical) and high forward transfer admittance of 4.0 S (typical). The device supports 4-V gate drive with an enhancement mode threshold voltage ranging from -0.8 V to -2.0 V. Absolute maximum ratings include a drain-source voltage of -60 V, continuous DC drain current of -5 A, and pulse drain current of -20 A. Power dissipation reaches 25 W at 25°C case temperature.

Feature Summary

Utilizes L²-π-MOSV technology for enhanced performance
Supports 4-V gate drive capability
Features low drain-source ON resistance
Provides high forward transfer admittance

Applications

DC-DC converter circuits
Relay drive systems
Motor drive applications

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package type JEDEC SC-67 availability. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing designs. Ensure channel temperature limits are respected during operation.

Selection Notes

Select this component for applications requiring efficient switching with low conduction losses. The device is suitable for general electronics including computers and industrial robots. Verify that the design accounts for the absolute maximum ratings, particularly regarding avalanche energy and thermal resistance. Ensure electrostatic discharge precautions are implemented during handling due to device sensitivity.

Part Context

This part belongs to the Toshiba Silicon P Channel MOS Type series. It is designed for general electronics applications. The manufacturer reserves the right to make changes without notice. The product is not intended for use in nuclear facilities, aerospace, medical equipment, or other unintended uses requiring extraordinary reliability levels.