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Product Detailed Parameters
- Description：MOSFET P-CH TO220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba 2SJ438 is a silicon P-channel MOSFET utilizing L²-π-MOSV technology, housed in the SC-67 (2-10R1B) package. It features a drain-source voltage rating of -60 V and a continuous DC drain current capacity of -5 A. The device exhibits a typical drain-source ON resistance of 0.16 Ω at VGS = -10 V and ID = -2.5 A. Key electrical parameters include a gate threshold voltage range of -0.8 to -2.0 V, a forward transfer admittance of 4.0 S, and a maximum channel-to-case thermal resistance of 5.0 °C/W.
Feature Summary
- Utilizes L²-π-MOSV technology for enhanced performance characteristics
- Features low drain-source ON resistance for efficient power switching
- Provides high forward transfer admittance for effective signal control
- Designed with low leakage current specifications
Applications
- DC-DC converter circuits
- Relay drive systems
- Motor drive applications
Procurement Notes
Verify component authenticity by inspecting the marking code J438 on the package surface. Confirm lot number formatting aligns with Toshiba's standard labeling conventions. Ensure compliance with specific environmental directives such as RoHS requirements by checking the product labels or contacting the manufacturer directly. Validate that the ordering suffix matches the required lead-free status for your assembly process.
Selection Notes
Select this component when a -60 V P-channel MOSFET with a -5 A continuous current rating is required. The low ON resistance makes it suitable for applications demanding high efficiency. Ensure the design accommodates the specified thermal resistance limits to maintain channel temperature within safe operating boundaries during operation.
Part Context
This device belongs to Toshiba's discrete field-effect transistor portfolio, specifically designed for general electronics applications. It serves as a switching element in power management circuits where reliable P-channel conduction is necessary. The component is intended for use in equipment such as computers, office appliances, and industrial robots.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics against the original datasheet specifications.
