2SJ438,Q(M

Description：MOSFET P-CH TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:7373ad76a634 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：5A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220NIS
Package / Case：TO-220-3 Full Pack

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2SJ438,Q(M

Overview

The Toshiba 2SJ438 is a silicon P-channel enhancement-mode MOSFET designed for general-purpose power switching. It features a maximum drain-source voltage of -60 V and a continuous DC drain current rating of -5 A. The device exhibits a typical drain-source on-resistance of 0.16 Ω at VGS = -10 V, with a maximum gate threshold voltage range of -0.8 to -2.0 V. Packaged in the JEDEC SC-67 (TOSHIBA 2-10R1B) format, it provides a thermal resistance from channel to case of 5.0 °C/W.

Feature Summary

Low drain-source on-resistance for efficient conduction
High forward transfer admittance for effective drive control
Integrated body diode with defined reverse recovery characteristics
Enhancement mode operation compatible with standard logic levels

Applications

DC-DC converter circuits
Relay drive systems
Motor drive applications

Procurement Notes

Verify component authenticity by checking the marking code 'J438' against the lot number format specified in the datasheet. Confirm RoHS compatibility status through official Toshiba sales representatives, as indicated by the presence or absence of an underline under the lot number. Ensure handling procedures account for electrostatic sensitivity during assembly.

Selection Notes

Select this component when a P-channel MOSFET with a -60 V breakdown voltage and -5 A continuous current capability is required. Consider the 0.16 Ω typical on-resistance for low-loss switching applications. Evaluate the thermal performance using the provided junction-to-case resistance values to ensure adequate heat dissipation within the specified 150°C channel temperature limit.

Part Context

This device belongs to Toshiba's L²-π-MOSV series of silicon P-channel field effect transistors. It utilizes specific MOS technology optimized for power switching efficiency. The component is intended for general electronics applications such as computers, office equipment, and industrial robots, excluding high-reliability sectors like aerospace or medical devices unless explicitly permitted.