2SJ456-TL-E

2SJ456-TL-E

$2.33
  • Description:PCH 10V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:b7ec4d040f7d Category: Brand:

  
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Product Detailed Parameters

  • Description:PCH 10V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ456-TL-E

Overview

The onsemi 2SJ456-TL-E is a P-channel enhancement mode MOSFET belonging to the 10V Drive Series. It is designed for high-efficiency power switching applications requiring low gate charge and fast switching speeds. The device features a robust surface-mount package suitable for automated assembly processes in consumer electronics and industrial equipment.

Feature Summary

  • Optimized for 10V gate drive compatibility
  • Low on-resistance for improved efficiency
  • Fast switching characteristics

Applications

  • DC-DC converter circuits
  • Power management modules
  • Motor control systems

Procurement Notes

Verify the exact datasheet revision and packaging specifications directly with onsemi or authorized distributors before procurement. Ensure that the ordering suffix matches the required tape and reel configuration for your manufacturing line. Cross-reference the part number with official component databases to confirm current production status and availability constraints.

Selection Notes

Select this component when designing circuits that require efficient P-channel switching with 10V logic compatibility. Evaluate thermal performance requirements against the package's power dissipation capabilities. Consider the gate charge parameters for driving circuit design to ensure optimal switching transitions and minimize power losses during operation.

Part Context

This part belongs to onsemi's discrete transistor portfolio, specifically within the single FET/MOSFET category. It complements other devices in the 10V Drive Series, offering standardized performance metrics for power management designers. The component supports modern surface-mount technology requirements for compact electronic designs.

Replacement Considerations

Consult official substitution guides for compatible P-channel MOSFETs with similar voltage ratings and package dimensions. Verify pinout compatibility and electrical parameter overlaps before implementing any alternative components in existing designs.

2SJ456-TL-E2SJ456-TL-E
$2.33
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