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Product Detailed Parameters
- Description：PCH POWER MOSFET -60V -15A 100MO
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ530-90STL-E is a silicon P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of -60V and a continuous drain current of -15A at 25°C. The device incorporates a low on-resistance of 100mΩ, ensuring efficient power handling in switching applications. Packaged in an embossed tape format with four leads, it is designed for industrial and consumer use cases requiring reliable discrete semiconductor performance.
Feature Summary
- P-channel silicon MOSFET construction
- Low on-resistance for efficient switching
- Industrial and consumer application suitability
Applications
- Industrial equipment power management
- Consumer electronics power circuits
- General-purpose switching applications
Procurement Notes
Verify the specific suffix '90STL-E' against official Renesas documentation to confirm packaging and reel specifications. Ensure compatibility with required thermal and electrical parameters for the target design. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm moisture sensitivity level and lead-free status as per the datasheet.
Selection Notes
Select this component for designs requiring a -60V P-channel switch with -15A current capability. Evaluate the 100mΩ on-resistance against thermal dissipation requirements. Consider the embossed tape packaging for automated assembly processes. Compare performance metrics with alternative P-channel MOSFETs if higher voltage or lower resistance is needed.
Part Context
This part belongs to Renesas's discrete semiconductor product line, specifically power MOSFETs. It serves as a standard-grade component for general electronic applications. The manufacturer provides technical data sheets detailing absolute maximum ratings and electrical characteristics for design integration.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic replacements may differ in on-resistance or package dimensions. Verify pinout compatibility before implementation.
