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Product Detailed Parameters
- Description：MOSFET N-CH 60V 18A TO220AB
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：65mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The 2SJ542-E is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-to-source voltage rating of -60V and a continuous drain current of -18A at 25°C ambient temperature. The device utilizes silicon technology and is housed in a TO-220AB package with three pins. Key electrical characteristics include an on-resistance of 65mΩ. It is designed for industrial and consumer applications, offering robust performance in through-hole mounting configurations.
Feature Summary
- P-channel silicon power MOSFET construction
- High current handling capability of 18A
- Low on-resistance for efficient power switching
- Through-hole TO-220AB package for thermal management
Applications
- Industrial equipment power control
- Consumer electronics power management
- General-purpose switching applications
Procurement Notes
Verify the specific datasheet version to confirm exact electrical parameters and mechanical dimensions. Ensure compatibility with your circuit's voltage and current requirements. Check for RoHS compliance status if required by your manufacturing standards. Confirm the package type matches your PCB layout constraints. Validate that the supplier provides genuine Renesas products.
Selection Notes
Select this component for applications requiring a P-channel MOSFET with moderate voltage and current ratings. Consider the TO-220AB package for its thermal dissipation capabilities in through-hole designs. Evaluate the 65mΩ on-resistance against your power loss constraints. Ensure the -60V rating exceeds your maximum operating voltage with adequate margin.
Part Context
This part belongs to Renesas' discrete power semiconductor portfolio, specifically within the MOSFET category. It serves as a switching element in power circuits. The product line focuses on providing reliable components for various electronic systems. Renesas offers a range of similar devices with varying specifications for different application needs.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage, current, and resistance when evaluating alternatives. Ensure any replacement maintains the same package type or requires adapter considerations.
