2SJ550S-E

2SJ550S-E

  • Description:TRANSISTOR
  • Series:-

SKU:6a1b1ca1fa87 Category: Brand:

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Product Detailed Parameters

  • Description:TRANSISTOR
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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2SJ550S-E

Overview

The 2SJ550S-E is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 60 V and a continuous drain current of 15 A. The device exhibits a maximum on-resistance of 0.155 Ω. It is housed in an LDPAK(S)-(1) package, also identified as TO-263, with four terminals. The component is RoHS compliant and designed for high-speed power switching applications.

Feature Summary

  • High-speed power switching capability
  • Low on-resistance for efficient conduction
  • Low drive current requirements
  • Compatible with 4 V gate drive logic

Applications

  • Motor driver circuits
  • Power supply load switches
  • DC-DC converter output stages

Procurement Notes

Verify the specific suffix 'E' against the official Renesas datasheet to confirm compliance status and exact electrical tolerances. Ensure the LDPAK(S)-(1) package dimensions match the target PCB footprint. Confirm that the 60V rating aligns with the system's peak voltage requirements under all operating conditions.

Selection Notes

Select this component for applications requiring a P-channel MOSFET with a 60V breakdown voltage and 15A current capacity. The low on-resistance makes it suitable for minimizing conduction losses. Verify that the thermal management solution supports the power dissipation characteristics defined in the official thermal resistance data.

Part Context

This part belongs to the Renesas 2SJ series of silicon P-channel MOSFETs. These devices are engineered for general-purpose power switching. The series emphasizes fast switching speeds and low gate charge to improve efficiency in switching power supplies and motor control systems.

Replacement Considerations

Consult the Renesas datasheet for direct pin-compatible alternatives within the same series, such as the 2SJ550 or 2SJ551. Verify that any substitute maintains the 60V/15A specifications and LDPAK(S)-(1) package form factor.

2SJ550S-E2SJ550S-E

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