2SJ598-ZK-E1-AZ

$0.99

Description：MP-3ZK
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2ad25af97672 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MP-3ZK
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：130mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1W (Ta), 23W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (MP-3ZK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SJ598-ZK-E1-AZ

Overview

The 2SJ598-ZK-E1-AZ is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 12 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 130 mΩ at Vgs = -10 V and Id = 6 A. It is housed in a TO-252 (DPAK) surface-mount package with a thermal resistance allowing for 23 W power dissipation at case temperature. The maximum operating junction temperature is 150 °C.

Feature Summary

Designed specifically for driving solenoids, motors, and lamps
Optimized for high-speed switching applications
Low on-state resistance for efficient power handling

Applications

Solenoid driver circuits
Motor driver systems
Lamp driver modules

Procurement Notes

Verify the complete part number including suffixes to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and specific lot traceability requirements with the authorized distributor or manufacturer representative prior to finalizing procurement orders.

Selection Notes

Select this component for applications requiring a 60 V P-channel switch with moderate current capacity. Ensure the gate drive voltage aligns with the specified threshold characteristics. Verify that the thermal management design supports the required power dissipation levels within the specified operating temperature range.

Part Context

This component belongs to the discrete semiconductor category, specifically power transistors. It is part of Renesas' portfolio of switching power MOSFETs designed for general-purpose power control tasks in consumer and industrial electronics.