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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SJ598(0)-Z-E1-AZ is a P-channel power MOSFET manufactured by Renesas Electronics. It features a maximum drain-source voltage of -60 V and a continuous drain current of -12 A at 25°C case temperature. The device exhibits low on-state resistance, with RDS(on)1 specified as 130 mΩ maximum at VGS = -10 V and ID = -6 A, and RDS(on)2 as 190 mΩ maximum at VGS = -4.0 V and ID = -6 A. Input capacitance (Ciss) is typically 720 pF. The component includes a built-in gate protection diode and an integrated body diode. It is available in TO-251 (MP-3) and TO-252 (MP-3Z) packages.
Feature Summary
- Low on-state resistance for efficient switching performance
- Integrated gate protection diode for ESD safeguarding
- Built-in body diode for inductive load handling
Applications
- Solenoid driver circuits
- Motor driver applications
- Lamp driver systems
Procurement Notes
Verify the specific package variant required, as the base part number covers both TO-251 and TO-252 configurations. Confirm that the application falls within the Standard quality grade recommendations provided by the manufacturer. Ensure all electrical parameters remain within the absolute maximum ratings defined in the datasheet to prevent device failure or warranty issues.
Selection Notes
Select this component when designing circuits requiring P-channel switching with moderate voltage ratings up to 60 V. Consider the thermal dissipation capabilities, which vary significantly between case-mounted and ambient conditions. Evaluate the gate drive requirements against the specified RDS(on) thresholds to ensure optimal conduction losses and switching speeds are achieved in the final design.
Part Context
This component belongs to the Renesas (formerly NEC Electronics) discrete semiconductor lineup. It is classified as a standard-grade P-channel MOSFET intended for general-purpose switching tasks. The product documentation retains references to the legacy NEC Electronics branding due to historical corporate mergers, but it is fully supported under the current Renesas Electronics portfolio.
Replacement Considerations
The datasheet lists the 2SJ598-Z as an alternative package option within the same family, corresponding to the TO-252 configuration. No other cross-model substitutes are documented in the official specifications.
FAQ
What is the function of the internal diode connected between the gate and source?
It serves as a protector against electrostatic discharge (ESD). External protection may still be required if voltages exceeding rated limits are applied.
How does the on-state resistance vary with gate voltage?
The datasheet specifies two maximum values: 130 mΩ at VGS = -10 V and 190 mΩ at VGS = -4.0 V, indicating higher resistance at lower gate drive levels.
