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The Renesas 2SJ604-ZJ-E1-AZ is a P-Channel Power MOSFET designed for surface mount applications in the TO-263 package. It features a drain-source voltage rating of 60 V and a continuous drain current of -45 A at case temperature. The device exhibits a maximum on-resistance of 30 mΩ at 23 A and 10 V gate-source voltage. Thermal performance includes a power dissipation of 1.5 W at ambient temperature and 70 W at case temperature. The component is lead-free and RoHS compliant, utilizing an embossed tape carrier type for automated assembly.
Verify the specific suffix E1-AZ to confirm the embossed tape carrier type and lead-free status. Ensure the TO-263 footprint matches the design requirements. Confirm that the 60V rating and 45A current capacity meet the circuit specifications. Check for any automotive-specific variants if higher reliability standards are required.
Select this component for high-current switching applications requiring low on-resistance. The TO-263 package offers improved thermal handling compared to smaller packages. Consider the 60V voltage headroom for standard 48V systems. Verify gate drive compatibility with the specified Rds(on) test conditions.
This part belongs to the Renesas 2SJ604 series of P-Channel Power MOSFETs. The ZJ suffix indicates the specific TO-263 package variant. The E1-AZ designation specifies the tape-and-reel packaging and environmental compliance. This series is distinct from other Renesas MOSFET families based on its voltage and current ratings.
The 2SJ604-AZ is listed as an obsolete alternative with bag packaging instead of embossed tape. Verify pinout and electrical parameters match before substitution. No other direct substitutes are confirmed in public documentation.