ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：P-CHANNEL SWITCHING POWER MOSFET
- Series：-
- Mfr：NEC Corporation
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：83A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：120W
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-220SMD
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The NEC Corporation 2SJ606-ZK-E1-AY is a P-channel switching power MOSFET designed for high-current applications. It features a Drain-to-Source Voltage (Vdss) of 60 V and a Continuous Drain Current (Id) of 83 A at 25°C. The device supports a maximum Gate-to-Source Voltage (Vgs) of ±20 V and dissipates up to 120 W of power. It utilizes Surface Mount Technology in a TO-220SMD package. Key electrical characteristics include a maximum input capacitance (Ciss) of 4800 pF at Vds = 10 V. The component is lead-free and RoHS compliant, suitable for robust power switching environments.
Feature Summary
- Super low on-state resistance for efficient power handling
- Designed specifically for high current switching applications
- RoHS compliant and lead-free construction
Applications
- High current switching circuits
- Power management systems requiring P-channel control
- Surface mount power electronics assemblies
Procurement Notes
Verify the manufacturer designation carefully, as some distributor listings incorrectly associate this part number with Texas Instruments. Confirm the specific suffix ZK-E1-AY matches the required NEC Corporation specification. Ensure the TO-220SMD packaging aligns with your board design requirements before finalizing procurement orders.
Selection Notes
Select this component when a P-channel MOSFET with 60 V rating and 83 A continuous current capability is required. The TO-220SMD package offers a balance between thermal performance and surface mount convenience. Consider the 4800 pF input capacitance for gate drive circuit design to ensure adequate switching speed without excessive drive current demands.
Part Context
This device belongs to the NEC Corporation 2SJ606 series of single FETs and MOSFETs. It is engineered as a power switching solution, distinct from logic-level or small-signal transistors. The series focuses on delivering high current capacity within a compact surface-mount form factor, targeting industrial and consumer power supply applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings against potential alternatives if sourcing directly from NEC is not feasible.
