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Product Detailed Parameters
- Description：2SJ632 - P-CHANNEL SILICON MOSFE
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SJ632-M-TD-E is a P-Channel Silicon MOSFET discrete component manufactured by onsemi. It belongs to the single FET and MOSFET category, designed for surface-mount applications. The device functions as a power switch utilizing P-channel technology. It is supplied in bulk packaging. This component is part of onsemi's broader portfolio of discrete semiconductor products.
Feature Summary
- Utilizes P-Channel Silicon MOSFET technology for efficient switching operations
- Designed for surface-mount installation to support automated assembly processes
- Functions as a single Field Effect Transistor within discrete semiconductor circuits
Applications
- Power management circuits requiring P-channel switching
- Load switch applications in electronic systems
- General purpose discrete transistor roles in consumer electronics
Procurement Notes
Verify the specific datasheet for electrical characteristics such as drain-source voltage and current ratings before integration. Confirm that the bulk packaging format aligns with your manufacturing equipment capabilities. Ensure compatibility with your system's thermal requirements and operating temperature range. Cross-reference the manufacturer part number to avoid confusion with similar variants or obsolete versions from previous production runs.
Selection Notes
Select this component when a P-Channel MOSFET is required for low-side or high-side switching configurations. Consider its surface-mount package for space-constrained designs. Evaluate its performance against alternative P-channel devices regarding on-resistance and switching speed. Ensure the supply chain can provide consistent availability for long-term production needs.
Part Context
This component is categorized under Discretes and specifically within the Transistors > FET, MOSFET sub-category. It is produced by onsemi, formerly associated with Fairchild Semiconductor branding in some contexts. The product line focuses on reliable silicon-based field effect transistors for various industrial and commercial electronic applications.
Replacement Considerations
Check for direct pin-compatible substitutes within the same P-Channel MOSFET family. Verify if other manufacturers offer equivalent specifications for cross-supply resilience. Ensure any replacement maintains the same package type and thermal characteristics.
