ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2SJ632 - P-CHANNEL SILICON MOSFE
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SJ632-TD-E is a P-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for general-purpose switching applications. It features a -60V drain-source voltage rating and supports a continuous drain current of 2A. The device exhibits a maximum on-resistance of 0.275 ohms at a gate-source voltage of 10V, ensuring efficient power handling in low-voltage circuits.
Feature Summary
- P-Channel MOSFET architecture
- Trench technology construction
- General-purpose switching capability
Applications
- Low-side load switching
- Power management circuits
- Battery protection systems
Procurement Notes
Verify the specific suffix TD-E against the official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring reliable P-channel switching with moderate current demands. Evaluate the 0.275 ohm on-resistance against system efficiency targets and ensure the -60V rating exceeds the maximum operating voltage to maintain safety margins.
Part Context
This discrete semiconductor belongs to the single FET category within onsemi's transistor portfolio. It serves as a fundamental building block for power control stages in consumer electronics and industrial equipment, offering a balance of performance and cost-effectiveness for standard switching tasks.
Replacement Considerations
Consult official substitution guides for equivalent P-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or updated series revisions.
