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The 2SJ646-TL-E is a P-Channel Silicon MOSFET manufactured by Sanyo. It features a drain-source voltage of -30V and a continuous drain current of 8A. The device has a maximum drain-source on-resistance of 75mΩ and supports power dissipation up to 15W. It utilizes a 3-pin surface-mount package with a tab for thermal management, designed for general-purpose switching applications.
Verify the specific ordering suffix and package variant against the official Sanyo datasheet to ensure compatibility with your design requirements. Confirm that the component meets all absolute maximum ratings for your intended operating conditions before finalizing procurement decisions.
Select this component for applications requiring a 30V P-Channel MOSFET with an 8A current rating. Ensure the thermal design accommodates the 15W power dissipation limit. Verify that the 75mΩ on-resistance meets the efficiency targets for the specific load and switching frequency requirements.
This part belongs to the Sanyo 2SJ646 series of P-Channel Silicon MOSFETs. These devices are engineered as general-purpose switching transistors, offering a balance of low on-resistance and fast switching speeds suitable for various power conversion and motor control applications in consumer and industrial electronics.
Check for direct substitutes within the same Sanyo family or equivalent specifications from other manufacturers. Ensure pinout compatibility and electrical parameters such as Vds, Id, and Rds(on) match or exceed the original requirements.