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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：400mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas Electronics 2SJ648-T1-A is a P-channel MOS field effect transistor designed for switching applications. It supports direct drive from a 2.5 V power source and features low on-state resistance. Key electrical parameters include a drain-to-source voltage of -20 V, a DC drain current of -0.4 A, and a total power dissipation of 200 mW. The device operates within an ambient temperature range of -55 to +150 °C storage and up to 150 °C channel temperature. It is housed in an SC-75 (USM) package.
Feature Summary
- Capable of being driven directly by a 2.5 V power source
- Features low on-state resistance for efficient switching
- Includes an internal gate-to-source protection diode against electrostatic discharge
Applications
- Power switches for portable machines
- General-purpose switching circuits requiring low-voltage drive
Procurement Notes
Verify the specific ordering suffix '-T1-A' against the latest official documentation, as datasheets may list variations such as '2SJ648'. Confirm the quality grade classification intended for your application before procurement. Ensure compliance with export control laws if applicable. Contact a Renesas Electronics sales office for details regarding environmental compatibility and availability in specific regions.
Selection Notes
Select this component when a P-channel MOSFET with low-voltage drive capability is required. Consider the -20 V maximum rating and -0.4 A continuous current limit during design. Evaluate thermal performance based on the 200 mW power dissipation rating at specified mounting conditions. Verify that the SC-75 package dimensions fit the target PCB layout constraints.
Part Context
This component is part of the Renesas Electronics portfolio, which includes products formerly manufactured by NEC Electronics Corporation following the April 2010 merger. The 2SJ648 series represents standard-grade discrete semiconductor devices suitable for general electronic equipment applications.
Replacement Considerations
Consult official Renesas documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical ratings, and package dimensions.
