ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 60V 28A TO220F-3SG
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3SG
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The onsemi 2SJ652-1E is a P-Channel Power MOSFET designed for through-hole mounting in TO-220F-3SG packages. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 28 A. The device exhibits a low on-resistance of 28.5 mΩ at a gate-source voltage of 10 V, with a maximum gate-source voltage rating of ±20 V. Thermal performance includes a power dissipation capacity of 30 W and an operating temperature range from -55 °C to +150 °C junction temperature. Key switching parameters include a gate charge of 80 nC, with rise and fall times of 210 ns and 180 ns respectively.
Feature Summary
- Enhancement-mode P-Channel silicon construction optimized for general-purpose power switching applications
- Low thermal resistance design facilitating efficient heat dissipation in through-hole configurations
- Robust avalanche energy capability ensuring reliability under transient load conditions
Applications
- DC motor control circuits requiring high current handling
- Power supply output stages and synchronous rectification
- Industrial automation drive systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm package integrity upon receipt as the TO-220F-3SG housing may be subject to handling variations. Cross-reference datasheet revisions to ensure parameter consistency with current design requirements. Validate compliance with relevant environmental directives prior to integration into final assemblies.
Selection Notes
Evaluate thermal management strategies carefully given the 30 W dissipation limit in the specified package. Ensure gate drive voltages remain within the ±20 V absolute maximum ratings to prevent oxide breakdown. Consider the 28.5 mΩ on-resistance impact on conduction losses during high-current operation. Verify that the 60 V voltage rating provides sufficient margin for the specific application's peak reverse voltage scenarios.
Part Context
This component belongs to the 2SJ652 series of P-Channel MOSFETs manufactured by onsemi. It represents a legacy silicon-based discrete semiconductor solution intended for medium-power switching tasks. The product line focuses on providing reliable performance for industrial and consumer electronics applications where through-hole mounting is preferred for mechanical stability.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official obsolescence notices or contact onsemi directly for recommended alternative components suitable for the same electrical and mechanical specifications.
