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Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SJ653 is a P-channel enhancement-mode MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 28 A. The device exhibits a low on-resistance (Rds(on)) of 28.5 mΩ, ensuring efficient power handling. It operates with a 4 V gate drive capability and has a typical gate charge (Qg) of 80 nC. Packaged in a TO-220-3 through-hole configuration, it supports a maximum power dissipation of 30 W and functions within a temperature range of -55°C to +150°C.
Feature Summary
- Optimized for 4 V gate drive operation to simplify control circuitry
- Low on-resistance for reduced conduction losses
- Ultrahigh-speed switching characteristics for efficient performance
Applications
- Motor driver circuits
- DC/DC converter topologies
- General-purpose switching devices
Procurement Notes
Verify the specific manufacturer source, as the component originated from Sanyo Semicon Device before acquisition by onsemi. Confirm that the TO-220-3 package matches your thermal and mechanical requirements. Ensure the 60 V rating aligns with your system's peak voltage stresses. Check for any specific ordering suffixes or revisions that may affect pinout or electrical tolerances compared to legacy datasheets.
Selection Notes
Select this component when a P-channel MOSFET with robust 28 A current capacity is required in a through-hole package. The 4 V drive compatibility makes it suitable for logic-level control interfaces without additional level shifting. Consider the 28.5 mΩ on-resistance for thermal management in high-current paths. The TO-220-3 package facilitates easy mounting on heatsinks for dissipating up to 30 W of power.
Part Context
This part belongs to the general-purpose switching MOSFET category. It was originally developed by Sanyo Semicon Device and is now part of the onsemi portfolio following corporate acquisitions. The device is characterized by its balance of high current handling and fast switching speeds, targeting industrial and consumer power management applications where reliability and efficiency are critical.
Replacement Considerations
The 2SJ652-1E is a related P-channel MOSFET from onsemi in the same series, offering similar 60 V and 28 A ratings but with different switching parameters. Verify pinout compatibility and thermal resistance values when substituting. Ensure the replacement meets the specific 4 V drive requirement if used in existing 4 V logic circuits.
