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Product Detailed Parameters
- Description：MOSFET P-CH 100V 12A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：136mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SJ655 is a P-channel power MOSFET designed for general-purpose switching applications. It features a maximum drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 12 A at 25 °C. The device utilizes a TO-220ML surface-mount package, providing robust thermal performance and mechanical stability. Key electrical characteristics include a low on-state resistance (R_DS(on)) to minimize conduction losses during operation. This component is suitable for use in DC-DC converters, motor control circuits, and load switch implementations where efficient power management and compact form factors are required.
Feature Summary
- P-channel enhancement mode construction for high-side or low-side switching configurations
- Low on-state resistance to reduce power dissipation and improve efficiency
- Robust thermal design within the TO-220ML package for reliable heat dissipation
- High breakdown voltage capability suitable for 100 V system architectures
Applications
- DC-DC converter input/output stages
- Motor driver circuits and solenoid control
- Load switches in industrial equipment
- Battery protection and management systems
Procurement Notes
Verify the specific suffix (e.g., -MG5) against the manufacturer's official datasheet to confirm exact pinout, packaging variant, and compliance certifications. Ensure the procurement channel provides traceable documentation matching the onsemi part number. Cross-reference the requested quantity with distributor availability lists to avoid discrepancies in batch codes or revision levels.
Selection Notes
Select this component when a P-channel MOSFET with 100 V rating and 12 A current capacity is required. Evaluate the thermal resistance parameters relative to the expected ambient temperature and duty cycle. Compare R_DS(on) values against alternative packages to ensure the TO-220ML footprint meets the PCB layout constraints while maintaining adequate heat sinking capabilities for the target application.
Part Context
The 2SJ655 belongs to the broader category of discrete power MOSFETs manufactured by onsemi. It serves as a standard solution for medium-power switching tasks in consumer electronics and industrial automation. The device represents a legacy part number often carried over from Fairchild Semiconductor acquisitions, maintaining compatibility with established designs requiring reliable P-channel performance.
Replacement Considerations
Check for direct cross-references such as 2SJ655-MG5. Verify that any substitute maintains identical pin configuration, voltage ratings, and thermal characteristics to ensure seamless integration without redesigning the surrounding circuitry.
