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Product Detailed Parameters
- Description：MOSFET P-CH 60V 38A TO262-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：39mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 65W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262-3
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The 2SJ661-1E is a P-channel power MOSFET manufactured by onsemi. It is housed in a surface-mount package designed for general-purpose switching applications. The device utilizes metal-oxide semiconductor technology to provide efficient control of electrical loads. Its construction supports operation within standard industrial temperature ranges, ensuring reliability in various electronic circuits requiring P-channel enhancement mode functionality.
Feature Summary
- P-channel power MOSFET configuration
- Metal-oxide semiconductor technology
- General-purpose switching capability
Applications
- General-purpose switching devices
- Electronic load control circuits
- Power management systems
Procurement Notes
Verify the manufacturer designation as onsemi or Sanyo Semicon Device, as historical lineage affects part identification. Confirm the specific suffix -1E corresponds to the intended packaging and tape-and-reel specifications. Ensure the component matches the P-channel enhancement mode description provided in official datasheets before integration into designs.
Selection Notes
Select this component for applications requiring a P-channel MOSFET with general-purpose switching characteristics. Evaluate the thermal dissipation requirements against the package capabilities. Consider the voltage and current ratings relative to the specific circuit load. Verify compatibility with the driving logic levels required for proper gate activation.
Part Context
This component belongs to the family of general-purpose switching devices produced by Sanyo Semicon Device, now part of onsemi. Similar parts in this category include the 2SJ662 and other P-channel variants designed for comparable switching duties. These components are widely used in consumer and industrial electronics for power control tasks.
Replacement Considerations
The ON Semiconductor part number 2SJ661-1E serves as a direct equivalent to the original Sanyo Semicon Device 2SJ661. Cross-reference pinouts and electrical parameters to ensure functional compatibility during substitution.
