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Product Detailed Parameters
- Description：MOSFET P-CH 60V 38A TO263-2
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：39mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 65W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The onsemi 2SJ661-DL-1E is a P-Channel Power MOSFET designed for general-purpose switching applications. It features a -60V drain-source voltage rating and supports a continuous drain current of -38A at ambient temperature. The device exhibits a low on-resistance of 39mΩ, contributing to efficient power management. Packaged in a TO-263-2 (TCPAK1012) surface-mount case, it offers thermal performance of 1.65W at ambient and 65W at case temperatures. The component integrates a body diode with low reverse recovery charge and soft recovery characteristics.
Feature Summary
- P-Channel Power MOSFET architecture optimized for general-purpose switching
- Low on-resistance for improved efficiency
- Soft recovery body diode with low reverse recovery charge
Applications
- General-purpose switching devices
- Power management circuits
- DC-DC converter topologies
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape-and-reel specifications. Confirm the manufacturing status as the base model may be subject to discontinuation notices. Ensure compatibility with the TCPAK1012 footprint during PCB layout. Cross-reference the datasheet revision date to validate electrical parameter consistency before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a P-channel solution with high current handling capabilities. The TO-263-2 package provides a balance between thermal dissipation and board space efficiency. Evaluate the 39mΩ on-resistance against system loss requirements. Consider the -60V rating for appropriate voltage headroom in low-voltage DC systems.
Part Context
This part belongs to the onsemi 2SJ661 series of P-Channel Power MOSFETs. The series utilizes the TCPAK1012 (TopCool) technology to enhance thermal performance. The 2SJ661-DL-1E variant specifically denotes the TO-263-2 surface-mount configuration. This family targets cost-effective solutions for medium-power switching applications.
Replacement Considerations
Check for direct substitutes within the same product family or equivalent packages from other manufacturers. Verify that any replacement maintains the -60V rating and comparable on-resistance values. Ensure pinout compatibility with the existing TO-263-2 footprint.
