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Product Detailed Parameters
- Description：MOSFET P-CH 60V 38A SMP-FD
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：39mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 65W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SMP-FD
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The onsemi 2SJ661-DL-E is a P-Channel Power MOSFET designed for general-purpose switching applications. It features a -60V drain-source voltage rating and supports a continuous drain current of -38A at ambient temperature. The device exhibits a maximum on-resistance of 39mΩ, ensuring efficient power handling. It is available in surface-mount packages including TO-262-3L and TO-263-2L, facilitating integration into compact electronic designs requiring robust p-channel switching capabilities.
Feature Summary
- P-Channel Power MOSFET architecture optimized for general-purpose switching
- Low on-resistance characteristic for efficient power management
- Surface-mount package options for automated assembly
Applications
- General-purpose switching devices
- Power management circuits
- DC-DC converter topologies
Procurement Notes
Verify the specific suffix (e.g., DL-E) to confirm package type and tape-and-reel specifications. Confirm end-of-life status with the manufacturer or authorized distributors, as this component may be discontinued. Ensure compatibility with existing PCB footprints for TO-262 or TO-263 packages before procurement.
Selection Notes
Select this component when a P-Channel MOSFET with -60V blocking capability and high current handling is required. Consider the thermal performance and package constraints relative to the application's power dissipation needs. Verify gate drive requirements align with the 4V drive series characteristics for optimal switching performance.
Part Context
This part belongs to onsemi's portfolio of discrete power semiconductors. It serves as a solution for medium-voltage switching tasks in industrial and consumer electronics. The device complements other power management components by providing reliable p-channel control in space-constrained designs.
Replacement Considerations
Public confirmed substitute: SUM55P06-19L-E3 from Vishay Siliconix. Verify pinout compatibility and electrical parameter equivalence before substitution.
