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Product Detailed Parameters
- Description：MOSFET P-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The Sanyo 2SJ664-E-SY is a P-Channel Silicon MOSFET designed for general-purpose switching applications. It features a drain-to-source voltage of 100V and a continuous drain current of 17A at 25°C. The device exhibits a maximum on-resistance of 0.193Ω and supports 4V drive levels. Key electrical characteristics include an avalanche energy rating of 38mJ and single-pulse avalanche current capability. The component is housed in a small outline package with three terminals, utilizing enhancement mode operation.
Feature Summary
- Ultrahigh-speed switching capability for efficient power control
- Low on-resistance to minimize conduction losses
- Guaranteed avalanche resistance for robust operation under transient conditions
- Compatible with 4V logic drive signals
Applications
- Motor drive circuits
- DC/DC converter topologies
- General-purpose switching devices
Procurement Notes
Verify the specific suffix (E-SY) against the manufacturer's current ordering list to confirm packaging and tape-and-reel specifications. Ensure the procurement documentation references the correct Sanyo Semicon Device part number to avoid confusion with similar series components. Confirm compliance requirements such as RoHS status directly from the official datasheet before finalizing orders.
Selection Notes
Select this component for applications requiring high-speed switching with moderate current handling capabilities. The 100V breakdown voltage suits low-voltage DC systems. Consider the 0.193Ω on-resistance for thermal management calculations. Verify that the 4V drive requirement aligns with the system's logic levels. Evaluate the avalanche energy rating if the application involves inductive loads or potential voltage spikes.
Part Context
This part belongs to the Sanyo 2SJ664 series of P-Channel Silicon MOSFETs. The series is characterized by general-purpose switching performance. The manufacturer, Sanyo Semicon Device, produces these discrete semiconductors for various electronic applications. The component represents a standard solution for power switching tasks where efficiency and speed are prioritized.
Replacement Considerations
Cross-reference with other P-Channel MOSFETs offering similar 100V ratings and 17A current capacity. Verify pinout compatibility and package dimensions before substitution. Check if alternative parts meet the 0.193Ω on-resistance and 38mJ avalanche energy specifications.
