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Product Detailed Parameters
- Description：MOSFET P-CH 60V 36A TO220
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 32W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220 Isolated Tab
- Package / Case：TO-220-3 Isolated Tab
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Overview
The 2SJ673-AZ is a P-Channel Power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high current switching applications and features a drain-to-source voltage rating of 60V. The device supports a typical surge current (Ipp) of 40A, making it suitable for demanding power management tasks. It is housed in a TO-252 package, providing efficient thermal performance for high-power amplifier and switching circuits.
Feature Summary
- P-Channel Power MOSFET architecture
- High surge current capability
- TO-252 surface-mount packaging
Applications
- High current switching applications
- High power amplifier circuits
- Power management systems
Procurement Notes
Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or approved substitute sources. Ensure that any replacement parts meet the original electrical specifications and package requirements to maintain system integrity and compliance with design standards.
Selection Notes
Select this component for designs requiring robust P-Channel MOSFET performance in compact form factors. Consider the 60V rating and 40A surge capability when evaluating circuit demands. Due to its obsolete status, prioritize alternative solutions that offer equivalent electrical characteristics and physical dimensions for new production runs.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the MOSFET category. It represents legacy technology from the company's historical product lines. The component was engineered for reliability in industrial and consumer electronics applications requiring efficient power switching capabilities.
Replacement Considerations
The FQPF47P06 is listed as a similar available substitute. Verify compatibility regarding voltage ratings, current handling, and pin configuration before implementation.
