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Product Detailed Parameters
- Description：MOSFET P-CH 20V 20A TO252
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：7mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 36W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (MP-3ZK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SJ687-ZK-E1-AY is a P-channel power MOSFET manufactured by Renesas Electronics Corporation, designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDSS) of -20V and a continuous drain current (ID) of -20A. The device exhibits low on-state resistance, with RDS(on) values of 7.0 mΩ max at VGS = -4.5V, 9.0 mΩ max at VGS = -3.0V, and 20 mΩ max at VGS = -2.5V, all measured at ID = -10A. It supports 2.5V drive logic and includes avalanche capability ratings. Packaged in a TO-252/DPAK format (MP-3ZK), it has a power dissipation (Pch) of 36W, typical input capacitance (Ciss) of 4400 pF, and total gate charge (Qg) of 57 nC.
Feature Summary
- Low on-state resistance optimized for efficient power switching across multiple gate voltage levels
- Capable of being driven by low power-supply voltages including 2.5V logic levels
- Includes avalanche capability ratings for enhanced robustness against transient energy events
Applications
- Industrial power supply circuits requiring P-channel switching
- Automotive systems utilizing industrial qualification level components
- Low-voltage drive motor control interfaces
Procurement Notes
Verify the specific ordering suffix E1-AY to confirm package type, lead-free status, and carrier configuration. Ensure compatibility with the MP-3ZK footprint dimensions of 6 x 6 x 2.65 mm during PCB layout. Confirm moisture sensitivity level and reel specifications if using embossed tape packaging for automated assembly processes.
Selection Notes
Select this component when a P-channel MOSFET with -20V rating and high current capacity (-20A) is required. Consider the low RDS(on) performance at -4.5V and -3.0V gate drives for efficiency. The TO-252 package suits applications needing moderate thermal dissipation up to 36W without extensive heatsinking.
Part Context
This part belongs to Renesas' industrial-grade power MOSFET portfolio. It is distinct from automotive-specific variants by its stated industrial qualification level. The device complements other P-channel offerings in the series, providing a balance between voltage rating, current handling, and gate drive flexibility for general-purpose power management tasks.
Replacement Considerations
Check for direct substitutes within the 2SJ687 family or equivalent -20V P-channel MOSFETs in TO-252 packages. Verify pinout compatibility and thermal characteristics before substitution. No specific alternative part numbers are confirmed in the provided documentation.
