2SK01980RL

Overview

The Panasonic 2SK01980RL is a silicon N-channel junction FET designed for low-frequency amplification. It features high mutual conductance and low-noise characteristics within a Mini3-G1 package. Key electrical parameters include a drain-source voltage of 30 V, a maximum drain current of 20 mA, and power dissipation of 150 mW. The device exhibits a forward transfer admittance of 4 mS at 1 kHz and a short-circuit forward transfer capacitance of 14 pF at 1 MHz.

Feature Summary

• High mutual conductance for effective signal amplification
• Low-noise performance suitable for sensitive circuits
• Miniature package design enabling downsizing and automated insertion

Applications

• Low-frequency amplification stages
• General electronic equipment
• Communications equipment
• Measuring instruments

Procurement Notes

Verify the specific IDSS rank (P, Q, or R) required for the application, as this parameter varies significantly across product ranks. Confirm compliance with RoHS Directive (EU 2002/95/EC). Check the manufacturer's official website for the latest lifecycle status, as the component may be subject to planned maintenance or discontinuation.

Selection Notes

Select based on the required drain-source current (IDSS) range, which spans from 0.5 mA to 12 mA depending on the rank. Ensure the operating frequency aligns with the specified admittance and capacitance measurements. Verify that the thermal management strategy accommodates the 150 mW power dissipation limit at the intended ambient temperature.

Part Context

This component belongs to the Panasonic Silicon Junction FETs (Small Signal) series. It serves as a modern replacement for the conventional 2SK198 part number. The device is manufactured by Panasonic Electronic Components and utilizes a surface-mount SOT-23 compatible footprint.

Replacement Considerations

The datasheet identifies the 2SK198 as the conventional equivalent part number. No other substitute part numbers are documented in the provided source material.