2SK06630RL

Overview

The Panasonic 2SK0663 is a silicon N-channel junction FET designed for low-frequency amplification and switching circuits. It features a low noise figure of 2.5 dB at 100 Hz and a high gate-drain voltage rating of -55 V with the source open. The device operates within a drain-source voltage range of 55 V and supports a maximum drain current of 30 mA. Electrical characteristics include a forward transfer admittance up to 7.5 mS and a short-circuit output capacitance of 1.9 pF. It is housed in an SMini3-G1 package, facilitating downsizing and automated insertion.

Feature Summary

• Low noise figure suitable for sensitive signal processing
• High gate-drain voltage withstand capability
• Compact SMini type package for space-constrained designs

Applications

• Low-frequency amplification circuits
• General-purpose switching applications
• Standard office equipment and communications gear

Procurement Notes

Verify the specific suffix (e.g., R) against official documentation to confirm tape/magazine packing details. Confirm compliance status and lifecycle stage via manufacturer resources before procurement.

Selection Notes

Select based on required IDSS rank (P, Q, or R) to match circuit biasing needs. Ensure operating conditions remain within absolute maximum ratings to prevent degradation.

Part Context

This component belongs to the Silicon Junction FETs (Small Signal) series from Panasonic Electronic Components. It serves as a standard discrete semiconductor for general electronic equipment requiring low-noise performance.

Replacement Considerations

Consult the manufacturer's website for the latest replacement information. Cross-compatibility should be verified against electrical parameters such as VGDO and NF.