2SK066500L

2SK066500L

  • Description:MOSFET N-CH 20V 100MA SMINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)

SKU:49cf66ae15b9 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 20V 100MA SMINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:50Ohm @ 20mA, 5V
  • Vgs(th) (Max) @ Id:3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):8V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SMini3-G1
  • Package / Case:SC-70, SOT-323

Download product information

2SK066500L

Overview

The Panasonic 2SK0665 is a silicon N-channel MOSFET designed for switching circuits, housed in an SC-70 SMini3-G1 package. It features a drain-source voltage of 20 V and a continuous drain current of 100 mA. The device includes internal resistors with a total resistance of 100 to 200 kΩ. Key electrical parameters include a gate threshold voltage of 1.5 to 3.5 V, a forward transfer admittance of 20 mS, and a drain-source ON resistance of 50 Ω at 20 mA. Turn-on and turn-off times are typically 1.0 µs.

Feature Summary

  • High-speed switching capability suitable for digital logic applications
  • Small drive current requirements due to high input impedance
  • Integrated internal resistor network for simplified circuit design
  • High electrostatic breakdown voltage protection

Applications

  • General electronic equipment such as office machines and measuring instruments
  • Communications equipment signal processing
  • Household appliance control circuits

Procurement Notes

Verify the component status before procurement as the datasheet indicates maintenance or discontinuation. Consult official manufacturer channels for the latest product standards and availability information. Ensure compliance with RoHS directives and verify that the specific package marking matches the required specifications for your assembly process.

Selection Notes

Select this component for low-power switching applications requiring small form factors. The integrated resistors simplify gate drive circuits compared to discrete MOSFETs. Verify that the 20 V drain-source voltage rating accommodates peak transient voltages in the target application environment to ensure reliable operation within absolute maximum ratings.

Part Context

This part belongs to the Panasonic silicon MOSFET family for small-signal applications. It utilizes the SC-70 SMini3-G1 surface-mount package, which supports automated placement. The device is compliant with the RoHS Directive (EU 2002/95/EC), ensuring environmental safety standards are met for standard commercial electronics manufacturing.

Replacement Considerations

The datasheet identifies 2SK665 as the conventional part number equivalent. Verify pinout compatibility and electrical characteristics when substituting with other SC-70 packaged N-channel MOSFETs from different manufacturers.

FAQ

What is the function of the internal resistors?

The internal resistors provide a defined gate-to-source path, simplifying circuit design by eliminating the need for external pull-down components.

What is the typical power dissipation limit?

The maximum power dissipation is 150 mW at an ambient temperature of 25°C.

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