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The Panasonic 2SK0665 is a silicon N-channel MOSFET designed for switching circuits, housed in an SC-70 SMini3-G1 package. It features a drain-source voltage of 20 V and a continuous drain current of 100 mA. The device includes internal resistors with a total resistance of 100 to 200 kΩ. Key electrical parameters include a gate threshold voltage of 1.5 to 3.5 V, a forward transfer admittance of 20 mS, and a drain-source ON resistance of 50 Ω at 20 mA. Turn-on and turn-off times are typically 1.0 µs.
Verify the component status before procurement as the datasheet indicates maintenance or discontinuation. Consult official manufacturer channels for the latest product standards and availability information. Ensure compliance with RoHS directives and verify that the specific package marking matches the required specifications for your assembly process.
Select this component for low-power switching applications requiring small form factors. The integrated resistors simplify gate drive circuits compared to discrete MOSFETs. Verify that the 20 V drain-source voltage rating accommodates peak transient voltages in the target application environment to ensure reliable operation within absolute maximum ratings.
This part belongs to the Panasonic silicon MOSFET family for small-signal applications. It utilizes the SC-70 SMini3-G1 surface-mount package, which supports automated placement. The device is compliant with the RoHS Directive (EU 2002/95/EC), ensuring environmental safety standards are met for standard commercial electronics manufacturing.
The datasheet identifies 2SK665 as the conventional part number equivalent. Verify pinout compatibility and electrical characteristics when substituting with other SC-70 packaged N-channel MOSFETs from different manufacturers.
The internal resistors provide a defined gate-to-source path, simplifying circuit design by eliminating the need for external pull-down components.
The maximum power dissipation is 150 mW at an ambient temperature of 25°C.