2SK1058-E

Description：MOSFET N-CH 160V 7A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:bc568e780d1c Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 160V 7A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：160 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

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2SK1058-E

Overview

The 2SK1058-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features an enhancement-mode configuration housed in a TO-3P package with three terminals. The device is designed for high-speed switching and low-frequency amplification applications. Key electrical specifications include a maximum drain current of 7 A and a minimum drain-source breakdown voltage of 160 V. The component includes built-in gate protection diodes and exhibits good complementary characteristics, making it suitable for audio power amplifier circuits.

Feature Summary

Equipped with integrated gate protection diodes to enhance reliability
Features a wide area of safe operation for robust performance
Designed for high-speed switching capabilities
Provides good frequency characteristics for signal integrity

Applications

Low frequency power amplifiers
Audio power amplifier circuits
High speed switching applications

Procurement Notes

Verify the specific suffix designation when ordering, as variations may exist within the product line. Confirm compliance requirements such as lead content and RoHS status against project specifications before procurement. Ensure the TO-3P package dimensions match the thermal management design. Cross-reference the manufacturer datasheet revision date to confirm the most current technical parameters are being utilized for the design.

Selection Notes

Select this component for designs requiring an N-channel enhancement-mode MOSFET with integrated gate protection. The TO-3P package offers distinct thermal dissipation advantages compared to smaller surface-mount options. Consider the complementary pairing with P-channel devices like the 2SJ160 series for push-pull configurations. Evaluate the 160 V breakdown voltage against the circuit's peak operating voltages to ensure adequate safety margins.

Part Context

This part belongs to the 2SK105x series of power MOSFETs from Renesas, which includes variants such as the 2SK1056 and 2SK1057. These components are engineered specifically for audio and low-frequency power amplification tasks. The series is characterized by its complementary nature and enhanced switching speeds, addressing the needs of high-fidelity audio equipment manufacturers.