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Product Detailed Parameters
- Description：JFET N-CH 22V 50MA 3MPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：22 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：12 mA @ 5 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：0 V @ 10 µA
- Input Capacitance (Ciss) (Max) @ Vds：9pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：150 mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-MPAK
- Grade：-
- Qualification：-
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Overview
The 2SK1070PIDTL-E is a silicon N-channel junction field-effect transistor (JFET) manufactured by Renesas Electronics. It is designed for low-frequency and high-frequency amplifier applications. The device features an MPAK surface-mount package with three terminals: Drain, Source, and Gate. Key electrical characteristics include a maximum drain current of 50 mA, a gate-to-source breakdown voltage of -22 V, and a channel power dissipation of 150 mW at 25°C ambient temperature. The PID suffix indicates a specific forward transfer admittance grade.
Feature Summary
- Silicon N-channel JFET construction
- MPAK surface-mount package configuration
- Low-frequency and high-frequency amplifier suitability
Applications
- Low frequency amplifiers
- High frequency amplifiers
Procurement Notes
Verify the exact ordering part number against the manufacturer's official documentation to ensure correct component selection. Confirm that the PID suffix corresponds to the required forward transfer admittance specifications for your circuit design. Check production status directly with Renesas sales offices as availability may vary by grade. Ensure compliance with standard quality grades for intended equipment usage.
Selection Notes
Select this component based on its N-channel JFET topology and MPAK package constraints. Evaluate the forward transfer admittance requirements against the PID grade specifications provided in the datasheet. Consider the absolute maximum ratings, particularly the -22 V gate-to-source breakdown voltage and 50 mA drain current limits. Verify thermal management capabilities within the 150 mW channel power dissipation rating for the target operating environment.
Part Context
This component belongs to the 2SK1070 series of silicon N-channel JFETs produced by Renesas Electronics. The series includes variants distinguished by different grading suffixes such as PIC, PID, and PIE, which denote specific ranges of forward transfer admittance. These devices are engineered for general-purpose amplification tasks requiring stable performance across varying frequencies.
Replacement Considerations
Consult the manufacturer's ordering information for direct equivalents. The 2SK1070PICTL-E and 2SK1070PIETL-E are listed as orderable part numbers within the same series. Verify pinout compatibility and electrical parameter alignment before substitution.
FAQ
What does the PID suffix indicate for the 2SK1070?
The PID suffix denotes a specific grade of forward transfer admittance (|yfs|), typically ranging from 18 to 30 mS under specified test conditions.
What is the maximum gate-to-source voltage rating?
The absolute maximum rating for gate-to-source voltage (VGSO) is -22 V.
What package type is used for the 2SK1070PIDTL-E?
The device utilizes the MPAK package, identified by the Renesas package code PLSP0003ZB-A.
