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Product Detailed Parameters
- Description：JFET N-CH 22V 50MA 3MPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：22 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：12 mA @ 5 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：0 V @ 10 µA
- Input Capacitance (Ciss) (Max) @ Vds：9pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：150 mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-MPAK
- Grade：-
- Qualification：-
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Overview
The 2SK1070PIETR-E is a silicon N-channel Junction FET manufactured by Renesas Electronics. It operates with a maximum drain current of 50 mA and a channel power dissipation of 150 mW at 25°C ambient temperature. The device features a gate-to-drain voltage rating of -22 V and a gate-to-source breakdown voltage of -22 V. Electrical characteristics include a typical forward transfer admittance of 30 mS at 1 kHz, an input capacitance of 9 pF at 1 MHz, and a gate cutoff current of -10 nA. The component is housed in the MPAK package (JEITA SC-59A) and is designed for low-frequency and high-frequency amplifier applications.
Feature Summary
- N-channel junction field-effect transistor architecture
- Low noise figure performance suitable for sensitive signal amplification
- High forward transfer admittance for effective signal gain
- MPAK surface-mount package design
Applications
- Low frequency amplifier circuits
- High frequency amplifier circuits
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm the shipping container format. The manufacturer indicates that production status may vary for certain grades; contact sales offices directly to confirm availability before placing orders. Ensure compliance with the specified quality grade requirements for the intended application environment.
Selection Notes
Select this component based on its 50 mA drain current limit and 150 mW power dissipation capability. Consider the -22 V voltage ratings for circuit protection margins. Evaluate the 30 mS forward transfer admittance and low noise figure specifications against the required signal gain and sensitivity levels for the target amplifier design.
Part Context
This part belongs to the 2SK1070 series of silicon N-channel JFETs produced by Renesas Electronics. The series utilizes the MPAK package code PLSP0003ZB-A. The product line is categorized under standard semiconductor components intended for general electronic equipment applications as defined by the manufacturer's quality guidelines.
Replacement Considerations
Official substitute part numbers are not documented in the provided datasheet. Verify pinout compatibility and electrical parameters such as IDSS ranges and VG(off) when evaluating third-party alternatives.
