2SK11030QL

Overview

The Panasonic 2SK11030QL is a silicon N-channel junction FET designed for switching circuits, featuring low ON resistance and low-noise characteristics. It operates with a maximum drain current of 20 mA and power dissipation of 150 mW at 25°C. The device has a gate-drain voltage rating of -65 V and a channel temperature limit of 150°C. Electrical parameters include a forward transfer admittance of 1.8 to 2.5 mS and a drain-source ON resistance of 300 Ω. Capacitance values are 7 pF (Ciss), 1.5 pF (Crss). It is housed in a Mini3-G1 package.

Feature Summary

• Low ON resistance
• Low-noise characteristics

Applications

• Switching circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Procurement Notes

Verify the specific ordering suffix '0QL' against official documentation to confirm if it denotes a specific rank or packaging variation. Confirm compliance with RoHS Directive EU 2002/95/EC. Check the latest product status on the manufacturer's website as this component may be subject to maintenance or discontinuation phases.

Selection Notes

Select based on required drain current and voltage ratings. Ensure the operating environment stays within the specified temperature range. Consider the Mini3-G1 package dimensions for PCB layout. Verify that the low noise and low ON resistance meet the circuit requirements.

Part Context

This component is part of Panasonic's silicon junction FET lineup for small signal applications. It serves as a complementary device to the 2SJ0163 P-channel FET. The product adheres to JIS C 7030 measuring standards for transistors.

Replacement Considerations

Consult the manufacturer for direct replacements. Evaluate alternative N-channel junction FETs with similar electrical characteristics and package compatibility. Verify pinout alignment and thermal performance before substitution.