2SK1119(F)

$2.35

Description：MOSFET N-CH 1000V 4A TO220AB
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:321f2460d238 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1000V 4A TO220AB
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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2SK1119(F)

Overview

The Toshiba Semiconductor and Storage 2SK1119(F) is a silicon N-channel MOSFET utilizing π-MOS II.5 technology, housed in a TO-220AB package. It features a drain-source voltage of 1000 V and a continuous drain current of 4 A at 25°C case temperature. The device exhibits a typical drain-source ON resistance of 3.0 Ω and a forward transfer admittance of 2.0 S. Key electrical characteristics include a gate threshold voltage range of 1.5 to 3.5 V and a maximum drain cut-off current of 300 μA at 800 V. Thermal performance includes a channel-to-case thermal resistance of 1.25 °C/W.

Feature Summary

High breakdown voltage capability with a 1000 V drain-source rating for robust operation in high-voltage circuits.
Low on-resistance design achieving a typical value of 3.0 Ω to minimize conduction losses.
Enhanced switching performance supported by low total gate charge and optimized capacitance values.

Applications

DC-DC converter circuits
Motor drive applications

Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm environmental compliance status, as markings indicate RoHS compatibility distinctions. Confirm that the component meets all absolute maximum ratings for your operating conditions, particularly regarding channel temperature limits and power dissipation derating requirements.

Selection Notes

Select this component for designs requiring high-voltage isolation and efficient power switching. Ensure the application circuit accounts for the specified thermal resistance and provides adequate heat sinking to maintain the channel temperature within the 150°C limit during continuous operation under load.

Part Context

This device belongs to the Toshiba π-MOS II.5 series of silicon N-channel MOSFETs. These transistors are engineered for general electronics applications, offering a balance of high voltage handling and low on-state resistance suitable for power management tasks.